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? semiconductor components industries, llc, 2010 october, 2010 ? rev. 6 1 publication order number: bc846bpdw1t1/d bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g dual general purpose transistors npn/pnp duals (complementary) these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 363/sc ? 88 which is designed for low power surface mount applications. features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings ? npn rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo 65 45 30 v collector-base voltage bc846 bc847 bc848 v cbo 80 50 30 v emitter ? base voltage v ebo 6.0 v collector current ? continuous i c 100 madc maximum ratings ? pnp rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo ? 65 ? 45 ? 30 v collector-base voltage bc846 bc847 bc848 v cbo ? 80 ? 50 ? 30 v emitter ? base voltage v ebo ? 5.0 v collector current ? continuous i c ? 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommen- ded operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation per device fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction ? to ? ambient r ja 328 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com sot ? 363 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 xx = device code m = date code = pb ? free package 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. device package shipping ? ordering information BC847BPDW1T2G sot ? 363 (pb ? free) 3000 / tape & reel bc847bpdw1t1g sot ? 363 (pb ? free) 3000 / tape & reel bf bf mark bc848cpdw1t1g sot ? 363 (pb ? free) 3000 / tape & reel bl bc846bpdw1t1g sot ? 363 (pb ? free) 3000 / tape & reel bb xx m 1 6 (note: microdot may be in either location)
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 2 electrical characteristics (npn) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma) bc846 series bc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = 10 a, v eb = 0) bc846 series bc847b only bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = 10 a) bc846 series bc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = 1.0 a) bc846 series bc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) bc846b, bc847b bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, bc847b bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ? emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 3 electrical characteristics (pnp) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 ma) bc846 series bc847 series bc848 series v (br)ceo ? 65 ? 45 ? 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = ? 10 a, v eb = 0) bc846 series bc847 series bc848 series v (br)ces ? 80 ? 50 ? 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = ? 10 a) bc846 series bc847 series bc848 series v (br)cbo ? 80 ? 50 ? 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = ? 1.0 a) bc846 series bc847 series bc848 series v (br)ebo ? 5.0 ? 5.0 ? 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ? 30 v) collector cutoff current (v cb = ? 30 v, t a = 150 c) i cbo ? ? ? ? ? 15 ? 4.0 na a on characteristics dc current gain (i c = ? 10 a, v ce = ? 5.0 v) bc846b, bc847b bc848c (i c = ? 2.0 ma, v ce = ? 5.0 v) bc846b, bc847b bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v ce(sat) ? ? ? ? ? 0.3 ? 0.65 v base ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v be(sat) ? ? ? 0.7 ? 0.9 ? ? v base ? emitter on voltage (i c = ? 2.0 ma, v ce = ? 5.0 v) (i c = ? 10 ma, v ce = ? 5.0 v) v be(on) ? 0.6 ? ? ? ? 0.75 ? 0.82 v small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ? 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ? 0.2 ma, v ce = ? 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 4 typical npn characteristics ? bc846 figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 figure 5. collector saturation region i b , base current (ma) figure 6. base ? emitter temperature coefficient i c , collector current (ma) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 5 typical npn characteristics ? bc846 figure 7. capacitance v r , reverse voltage (volts) 40 figure 8. current ? gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 6 typical pnp characteristics ? bc846 figure 9. dc current gain vs. collector current figure 10. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 11. base emitter saturation voltage vs. collector current figure 12. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 figure 13. collector saturation region i b , base current (ma) figure 14. base ? emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -50 ma -200 ma
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 7 typical pnp characteristics ? bc846 figure 15. capacitance v r , reverse voltage (volts) 40 figure 16. current ? gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 8 typical npn characteristics ? bc847 series figure 17. dc current gain vs. collector current figure 18. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 19. base emitter saturation voltage vs. collector current figure 20. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 1.0 figure 21. collector saturation region i b , base current (ma) figure 22. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 9 typical npn characteristics ? bc847 series figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 10 typical pnp characteristics ? bc847 series figure 25. dc current gain vs. collector current figure 26. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.35 figure 27. base emitter saturation voltage vs. collector current figure 28. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 0.30 figure 29. collector saturation region i b , base current (ma) figure 30. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) -0.2 -10 -100 -1.0 -55 c to +125 c i c = -100 ma i c = -20 ma i c = -200 ma i c = -50 ma i c = -10 ma t a = 25 c 1.0
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 11 typical pnp characteristics ? bc847 series figure 31. capacitances v r , reverse voltage (volts) 10 figure 32. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 12 typical npn characteristics ? bc848 series figure 33. dc current gain vs. collector current figure 34. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 1000 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 35. base emitter saturation voltage vs. collector current figure 36. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 500 600 700 800 900 1.0 figure 37. collector saturation region i b , base current (ma) figure 38. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 13 typical npn characteristics ? bc848 series figure 39. capacitances v r , reverse voltage (volts) 10 figure 40. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 14 typical pnp characteristics ? bc848 series figure 41. dc current gain vs. collector current figure 42. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 1000 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 43. base emitter saturation voltage vs. collector current figure 44. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 500 600 700 800 900 figure 45. collector saturation region i b , base current (ma) figure 46. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) -0.2 -10 -100 -1.0 -55 c to +125 c i c = -100 ma i c = -20 ma i c = -200 ma i c = -50 ma i c = -10 ma t a = 25 c 1.0
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 15 typical pnp characteristics ? bc848 series figure 47. capacitances v r , reverse voltage (volts) 10 figure 48. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 16 figure 49. thermal response figure 50. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ? v ce lim- its of the transistor that must be observed for reliable op- eration. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 50 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 49. at high case or ambient temperatures, thermal limita- tions will reduce the power that can be handled to values less than the limitations imposed by the secondary break- down. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01
bc846bpdw1t1g, bc847bpdw1t1g, bc848cpdw1t1g http://onsemi.com 17 package dimensions sc ? 88/sot ? 363/sc70 ? 6 case 419b ? 02 issue w style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* sc ? 88/sc70 ? 6/sot ? 363 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bc846bpdw1t1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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